IGBT Module T-Series Mitsubishi Electric

IGBT Module T-Series Mitsubishi Electric

Mitsubishi Electric Corporation announced samples of semiconductor of it’s new T-series. Power semiconductor modules featuring seventh-generation insulated-gate bipolar transistors (IGBT’s), comprising three different packages and 48 models in total.



The modules will be exhibited at major trade shows including Power Conversion Intelligent Motion (PCIM) Asia 2015 in China from June 24 to 26.

The IGBT element employed for the J1 is the “CSTBT (carrier stored trench-gate bipolar transistor),” the sixth-generation product with a structure using carrier storage effect. With this IGBT device, the collector-emitter saturation voltage was reduced by about 15%, compared with that of the CT-600-DJH-060. Moreover, with a direct water cooling structure integrated with a cooling fin, the heat radiation was improved by 40%, compared with that of the CT-600-DJH-060. Mitsubishi Electric Corp will release the “J1 Series,” a power semiconductor module equipped with six IGBT elements for driving the inverters of the motors of electric and hybrid electric vehicles.

By attaching six IGBT elements to one module, Mitsubishi Electric realized a footprint of 117.0 x 113.0mm, which is about 20% smaller than that of three units of the “CT-600-DJH-060,” the company’s power semiconductor module equipped with two IGBT elements.

Reliability of defecto standard package are improved by latest package technology

  • The internal structure is improved, keeping compatibility with de facto standard package.
  • Integration of insulation and copper base in the substrate, along with improved internal electrode construction, helps to increase thermal cycle life 3 and lower internal inductance, leading to more reliable equipment performance.

Reduced power loss thanks to seventh-generation IGBT and seventh-generation diode

  • Seventh-generation CSTBT 1TM chip achieves low power loss and low E.M.I noise.
  • Relaxed Field of Cathode (RFC) diode2 chip incorporating new backside diffusion process achieves low power loss and suppression of recovery-voltage surge.